The scanning electron micrograph (
SEM) shows some of my handy work in the lab. The structure was patterned using
ebeam ligthography -- specifically with the
Raith ebeam lithography system. Also, you should know, that instead of the traditional
PMMA positive-toned resist, I used
HSQ. I used
HSQ in order to simply the steps required to make the hard mask. You see, after the
HSQ is exposed and developed during the
ebeam lithography process, that patterned
HSQ is etch-mask ready. Compare
HSQ with
PMMA: the
PMMA resist is so thin, that it could not possibly used as an etch-mask. As a result, there are a few additional steps required to transfer the
PMMA resist into a suitable etch-mask.
In the
SEM, the top most layer is
HSQ. Notice how the
HSQ etch-mask is
attrited into a
prism-like structure. the
HSQ etch-mask attrition
occurred during reactive ion etching of the underlying
GaAs/
AlGaAs material.
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